Modeling of the Advanced Spin Transfer Torque Memory: Macro- and Micromagnetic Simulations
نویسندگان
چکیده
We study the dynamics of the switching process in a magnetic tunnel junction composed of 5 layers with the magnetization of the two side layers fixed. The magnetization of the middle free layer can be switched between the two stable configurations by passing the current through the tunnel junction in a certain direction. The dependence of the switching time on the parameters of the penta-layer structure is analyzed.
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